Job Description
Company Description
AGNIT Semiconductors Private Limited is India’s leading and only provider of Gallium Nitride (GaN) solutions for RF and power electronics. As an integrated device manufacturer, the company delivers GaN wafers, devices, packaged components and modules for applications across the strategic and telecom sector. A spin-off from the Indian Institute of Science (IISc), Bangalore, AGNIT leverages over 15 years of R&D with distinguished IP in GaN materials, processes, and devices. The leadership team collectively brings over 100 years of experience spanning the semiconductor value chain.
Role Description
n this role, you will be pivotal in designing and developing high-efficiency GaN power amplifiers/MMICs for next-gen wireless transmit applications. You will tackle complex design challenges and work on state-of-the-art projects that push the boundaries of current technology.
Key Responsibilities:
Innovative Design (PA):
Lead the design and optimization of GaN power amplifiers which could be internally matched (IMFETs) devices, eval boards, hybrid MICs and MMICs, focusing on cutting-edge applications such as compact solid-state power amplifiers and linear point to point data links, among others. Leverage advanced tools and techniques to achieve superior performance metrics.
Innovative Design (MMICs):
Lead the design and optimization of GaN low-noise amplifiers, switches, etc focusing on integrated front-end modules. Leverage advanced tools and techniques to achieve superior performance metrics.
Advanced Simulation:
Use simulation tools to model and analyze RF circuit behaviours. Apply predictive analysis to pre-emptively address potential issues and enhance design robustness.
Hands-On assembly, fabrication and Testing:
Collaborate closely with fabrication and assembly teams, both in-house and external, to oversee the production of power amplifiers and/or front-end modules. Develop and implement rigorous testing protocols to validate performance against high standards.
Collaborative Innovation:
Work alongside a multidisciplinary team to bring to bear RF circuit design requirements to the materials, process, device and packaging & assembly teams. Contribute to brainstorming sessions and technical reviews to drive project success.
Documentation and Communication:
Produce comprehensive design documentation and reports. Effectively communicate technical insights and progress to stakeholders and project teams, facilitating informed decision-making.
Qualifications:
Education:
Master’s or PhD in EE/ECE/E&I Engineering, Microwave Engineering, or related field.
Experience:
At least 2+ years of experience post-education in RF design with a focus on power amplifiers and/or low noise amplifiers and/or switches. Proven ability to work with foundry PDKs with proven tape-out experience towards high-efficiency designs and product development is essential.
Technical Expertise:
Deep knowledge of RF PA or LNA or switch design. Background in GaN technology is desirable. Proficiency in advanced simulation tools like Microwave Office, Keysight ADS, HFSS and CST. Experience with at least one of high-efficiency PA design, superior noise performance LNA designs, MMIC switch design and integrated front-end design is preferable.
Analytical Skills:
Strong ability to analyze and comprehend RF device level measurement and simulation data to solve intricate design problems on a stringent timeline.
Communication Skills:
Excellent verbal and written communication skills, with experience presenting technical information to diverse audiences.
Preferred Qualifications:
Experience with RF PA design and specifically GaN PA design would be preferable.
Experience with MMIC LNA design and switch design, specifically with GaAs/GaN would be preferable
Background in MMIC or PA product development for strategic and telecom sector.
What We Offer:
Competitive salary with performance-based bonuses and ESOPs.
Comprehensive benefits package including health insurance and retirals.
Opportunities for professional growth through mentorship, training, and career advancement programs.
A tightly-knit, collaborative and inclusive work environment where innovation is expected & encouraged.
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Don't miss this opportunity! Apply now and join our team.
Job Details
Posted Date:
February 24, 2026
Job Type:
Construction
Location:
Bangalore, India
Company:
AGNIT Semiconductors
Ready to Apply?
Don't miss this opportunity! Apply now and join our team.